FLM3135-8F
FEATURES
• High Output Power:P1dB= 39.5dBm (Typ.)• High Gain:G1dB= 11.0dB (Typ.)• High PAE:ηadd= 37% (Typ.)
• Low IM3= -45dBc@Po = 28.5dBm• Broad Band:3.1 ~ 3.5GHz
• Impedance Matched Zin/Zout = 50Ω • Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3135-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highestreliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)ItemDrain-Source VoltageGate-Source VoltageTotal Power DissipationStorage TemperatureChannel TemperatureSymbolVDSVGSPTTstgTchTc = 25°CConditionRating15-542.8-65 to +175175UnitVVW°C°CFujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively withgate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)ItemSaturated Drain CurrentTransconductancePinch-off VoltageGate Source Breakdown VoltageOutput Power at 1dB G.C.P.Power Gain at 1dB G.C.P.Drain CurrentPower-added EfficiencyGain Flatness3rd Order IntermodulationDistortionThermal ResistanceChannel Temperature RiseCASE STYLE: IBSymbolIDSSgmVpVGSOP1dBG1dBIdsrηadd∆GIM3Rth∆Tchf = 3.5 GHz, ∆f = 10 MHz2-Tone TestPout = 28.5dBm S.C.L.Channel to Case10V x Idsr x RthTest ConditionsVDS = 5V, VGS = 0VVDS = 5V, IDS = 2200mAVDS = 5V, IDS = 180mAIGS = -180µAVDS =10V,IDS = 0.55 IDSS (Typ.),f = 3.1 ~ 3.5 GHz,ZS=ZL= 50 ohmMin.---1.0-5.038.510.0----42--LimitTyp.Max.39005850-2000-2.0-39.511.037--453.0--3.5----±0.6-3.580UnitmAmSVVdBmdBmA%dBdBc°C/W°C22002600G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.0
December 2000
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元器件交易网www.cecb2b.com
FLM3135-8F
C-Band Internally Matched FET
POWER DERATING CURVE
50
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10Vf1 = 3.5 GHzf = 3.51 GHz332
2-tone test
3531
Pout
40
Output Power (S.C.L.) (dBm)Total Power Dissipation (W)30
-15
20
272523
14
16
18
IM3
-35-45-55
10
050100150200
2022
Case Temperature (°C)
Input Power (S.C.L.) (dBm)S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10Vf = 3.3 GHz
Pout
Output Power (dBm)4139373533
41
Output Power (dBm)Pin=29dBm26dBm24dBm
3937
453015
22dBm
3533
3.13.23.33.43.5
23252729
Frequency (GHz)
Input Power (dBm)
2
ηadd (%)ηadd
IM3 (dBc)29
-25
元器件交易网www.cecb2b.com
FLM3135-8F
C-Band Internally Matched FET
S11S22+j100SCALE FOR |S21|+j50+j253.23.33.43.53.6GHz50Ω3.43.03.13.23.3100250+90°3.043.13213.03.13.23.33.53.43.53.6GHz3.43.2S21S123.1+j103.0+j2503.30
103.6GHz3.5180°0.20.10°SCALE FOR |S12|3.6GHz-j10-j250-j25-j50-j100-90°S-PARAMETERS
VDS= 10V, IDS= 2200mA
FREQUENCY(MHZ)
3000310032003300340035003600
S11MAG
.638.683.670.604.475.284.217
S21
ANG
150.7128.0109.192.277.072.3116.0
S12
ANG
81.859.036.513.0-13.8-44.9-79.5
S22
ANG
MAG
.333.274.206.135.155.285.402
MAG
4.2144.0424.0054.1054.2644.3334.095
MAG
.071.071.073.078.085.090.088
ANG
66.158.941.60.1-78.8-130.6-168.7
20.0-2.4-24.8-47.5-73.5-102.8-136.1
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元器件交易网www.cecb2b.com
FLM3135-8F
C-Band Internally Matched FET
Case Style \"IB\"Metal-Ceramic Hermetic Package2.0 Min.(0.079)2-R 1.6±0.15(0.063)120.1(0.004)30.6(0.024)2.0 Min.(0.079)2.6±0.15(0.102)5.2 Max.(0.205)10.7(0.421)0.2 Max.(0.008)1.45(0.059)12.9±0.2(0.508)12.0(0.422)17.0±0.15(0.669)21.0±0.15(0.827)1. Gate2. Source (Flange)3. DrainUnit: mm(inches)For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.TEL:(408) 232-9500FAX:(408) 428-9111
www.us.eudyna.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.Network HouseNorreys Drive
Maidenhead, Berkshire SL6 4FJUnited Kingdom
TEL:+44 (0) 1628 504800FAX:+44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.Hong Kong BranchRm.1101, Ocean Centre, 5 Canton Rd.Tsim Sha Tsui, Kowloon, Hong KongTEL:+852-2377-0227FAX:+852-2377-3921
Eudyna Devices Inc.reserves the right to change products and specificationswithout notice.The information does not convey any license under rights ofEudyna Devices Inc.or others.
©2004 Eudyna Devices USA Inc.Printed in U.S.A.
Eudyna Devices Inc.Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, JapanTEL:+81-45-853-8156FAX:+81-45-853-8170
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