Nitride semiconductor laser device

专利名称：Nitride semiconductor laser device发明人：Yuhzoh Tsuda,Masataka Ohta,Yoshie

Fujishiro

申请号：US13302266申请日：20111122公开号：US08311070B2公开日：20121113

专利附图：

摘要：A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaNlayer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guidelayer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type

AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein then-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm;the first and second InGaN light guide layers have an In composition ratio of 3-6%; thefirst light guide layer has a thickness of 120-160 nm and greater than that of the secondlight guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer andhas an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

申请人：Yuhzoh Tsuda,Masataka Ohta,Yoshie Fujishiro

地址：Osaka JP,Osaka JP,Osaka JP

国籍：JP,JP,JP

代理机构：Harness, Dickey & Pierce, P.L.C.

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