专利名称：Semiconductor device and semiconductor
integrated circuit device for driving plasmadisplay using the semiconductor device
发明人：Kenji Hara,Junichi Sakano,Shinji Shirakawa申请号：US12103911申请日：20080416公开号：US07948058B2公开日：20110524
专利附图：
摘要：A lateral IGBT structure having an emitter terminal including two or more baselayers of a second conductivity-type for one collector terminal, in which the base layers
of a second conductivity-type in emitter regions are covered with a first conductivity-typelayer having a concentration higher than that of a drift layer so that a silicon layerbetween the first conductivity-type layer covering the emitter regions and a buried oxidefilm has a reduced resistance to increase current flowing to an emitter farther from thecollector to thereby enhance the current density.
申请人：Kenji Hara,Junichi Sakano,Shinji Shirakawa
地址：Hitachi JP,Hitachi JP,Hitachi JP
国籍：JP,JP,JP
代理机构：Antonelli, Terry, Stout & Kraus, LLP.
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