Process for the selective growth of GaAs

专利名称：Process for the selective growth of GaAs发明人：Heinz P. Meier,Edward A. Van Gieson,Willi

Walter

申请号：US07/720965申请日：19910625公开号：US05185289A公开日：19930209

摘要：The process is particularly useful in the fabrication of GaAs quantum well (QW)laser diodes. Starting point is a ridge-patterned (100)- substrate (21), the crystalorientation of the sidewalls, e.g., (411A)- oriented, being different from that of thehorizontal top. The sidewall facets thus have a lower Ga incorporation rate.

In a molecular beam epitaxy (MBE) system, the lower AlGaAs cladding layer (22) is firstgrown, followed by the high-temperature growth of the active GaAs QW (23). Due todiffusion and desorption processes, the GaAs thickness at the sidewalls is smaller than onthe horizontal top of the ridge. During a short growth interrupt, the GaAs completelydesorbs from the sidewall facets. With the subsequent growth of the upper claddinglayer (24), the QW becomes laterally embedded in higher bandgap material providing forlateral electric confinement.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

代理人：Aziz M. Ahsan

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