Vertical power MOSFET and methods of forming the s

专利名称：Vertical power MOSFET and methods of

forming the same

发明人：Chun-Wai Ng,Hsueh-Liang Chou,Ruey-Hsin

Liu,Po-Chih Su

申请号：US14530246申请日：20141031公开号：US09673297B2公开日：20170606

专利附图：

摘要：A device includes a semiconductor layer of a first conductivity type, and a firstand a second body region over the semiconductor layer, wherein the first and the second

body regions are of a second conductivity type opposite the first conductivity type. Adoped semiconductor region of the first conductivity type is disposed between andcontacting the first and the second body regions. A gate dielectric layer is disposed overthe first and the second body regions and the doped semiconductor region. A first and asecond gate electrode are disposed over the gate dielectric layer, and overlapping thefirst and the second body regions, respectively. The first and the second gate electrodesare physically separated from each other by a space, and are electrically interconnected.The space between the first and the second gate electrodes overlaps the dopedsemiconductor region.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Slater Matsil, LLP

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