贴片稳压二极管 BZX584C20 SOD-523

SOD-523 Plastic-Encapsulate Diode SOD-523

BZX584C2V4-BZX584C43 ZENER DIODE

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FEATURES

Planar Die Construction 150mW Power Dissipation Zener Voltages from 2.4 – 43V

MAXIMUM RATINGS(Ta=25℃ unless otherwise specified)

Characteristic

Power Dissipation

Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature

Symbol

Value

Unit

Forward Voltage @I=V F10mA VF 0.9 mW PD 150 RθJA Я/W833 TjTstg

150-55~+150

ЯЯ

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Ta=25℃unless otherwise specified Maximum Zener Impedance

(Note 3)

IZT

ZZT@IZT

ZZK@IZK

Maximum Reverse Current IR

Typical temperature

coefficient @ IZT

ELECTRICAL CHARACTERISTICS

Zener Voltage Range (Note 2)

Type Number

Type Code

VZ@IZT

Nom(V) Min(V) Max(V) (mA)

BZX584C2V4 Z11 BZX584C2V7 Z12 BZX584C3V0 Z13 BZX584C3V3 Z14 BZX584C3V6 Z15 BZX584C3V9 Z16 BZX584C4V3 Z17 BZX584C4V7 Z1 BZX584C5V1 Z2 BZX584C5V6 Z3 BZX584C6V2 Z4 BZX584C6V8 Z5 BZX584C7V5 Z6 BZX584C8V2 Z7 BZX584C9V1 Z8 BZX584C10 Z9 BZX584C11 Y1 BZX584C12 Y2 BZX584C13 Y3 BZX584C15 Y4 BZX584C16 Y5 BZX584C18 Y6 BZX584C20 Y7 BZX584C22 Y8 BZX584C24 Y9 BZX584C27 Y10 BZX584C30 Y11 BZX584C33 Y12 BZX584C36 Y13 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36

2.20 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 2.60 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 VR mV/°C (Ω) (mA) (μA) (V) Min Max 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 50 20 10 5 5 3 3 3 2 1 3 2 1 1.0 -3.5 1.0 -3.5 1.0 -3.5 1.0 -3.5 1.0 -3.5 1.0 -3.5 1.0 -3.5 2.0 -3.5 2.0 -2.7 2.0 -2.0 4.0 0.4 4.0 1.2 5.0 2.5 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 25.3 29.4 33.4 37.4

1.0 0.7 5.0 3.2 1.0 0.5 6.0 3.8 9.4 10.6 10.4 11.6 11.4 12.7 12.4 14.1 13.8 15.6 15.3 17.1 16.8 19.1 18.8 21.2 20.8 23.3 22.8 25.6 25.1 28.9 150 1.0 0.2 7.0 4.5 150 1.0 0.1 8.0 5.4 150 1.0 0.1 8.0 6.0 170 1.0 0.1 8.0 7.0 200 1.0 0.1 10.5 9.2 200 1.0 0.1 11.2 10.4 225 1.0 0.1 12.6 12.4 225 1.0 0.1 14.0 14.4 250 1.0 0.1 15.4 16.4 250 1.0 0.1 16.8 18.4 300 300 325 350 0.5 0.1 18.9 21.4 0.5 0.1 21.0 24.4 0.5 0.1 23.1 27.4 0.5 0.1 25.2 30.4 28.0 32.0 31.0 34.0 35.0 38.0 BZX584C39 Y14 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 Y15 43 40.0 46.0 2 100 700 1 0.1 32 10 12 BZX584C43 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2.Tested with pulses, period=5ms,pulse width =300μs. 3.f = 1kHz.

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Typical Characteristics

Zener Characteristics(VZ Up to 10 V) 10050(11 V to 43 V)Zener Characteristics Ta =25℃PulsedIZ, ZENER CURRENT (mA)10Ta =25℃PulsedIZ, ZENER CURRENT (mA) PD =150mWPD =150mW10 11112131516182022242733303639435.12.44.75.66.26.87.58.29.110.51012345678910110.1101520253035404550Temperature Coefficients40100VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Typical Leakage CurrentPulsedθVZ, TEMPERATURE COEFFICIENT (mV/℃)35302520151050TYPICAL Ta VALUESFOR BZX584CXXX SERIES10IR, LEAKAGE CURRENT (uA)1VZ @ IZT 0.10.011E-3Ta=100℃Ta=25℃-50481216202428323640441E-4051015202530354045VZ, NOMINAL ZENER VOLTAGE (V) Typical Capacitance10001000VZ, NOMINAL ZENER VOLTAGE (V)Effect of Zener Voltage on Zener Impedance Ta=25℃f=1MHzZZT, DYNAMIC IMPEDANCE(Ω)Ta=25℃IZ=1mAIZ(AC)=0.1IZ(DC)f=1kHz0V BIASC, CAPACITANCE (pF)100100IZ=5mA1V BIAS 10BIAS AT50% OF VZ NOM1011101001110100VZ, NOMINAL ZENER VOLTAGE (V)

Power Derating Curve

200

VZ, NOMINAL ZENER VOLTAGE (V)

POWER DISSIPATION PD (mW)150

100

50

00

25

50

75

100

125

150

AMBIENT TEMPERATURE Ta (℃)

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SOD-523 Package Outline Dimensions

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